Product line
AOZ1267QI-01 Power MOSFET
The AOZ1267QI-01 is a high-performance power MOSFET designed for efficient switching applications. This N-channel MOSFET features low on-resistance and fast switching speeds, making it ideal for use in power management systems.
Overview
Overview
The AOZ1267QI-01 is a robust N-channel power MOSFET that delivers exceptional performance for a variety of applications including power supplies, DC-DC converters, and load switching. With a maximum drain-source voltage of 30V and a continuous drain current rating of 40A, this MOSFET is engineered to handle high power demands while maintaining high efficiency. The device is housed in a compact SO-8 package, ensuring minimal space requirement on PCBs and facilitating easier integration into existing designs.
Key Specifications
- Type: N-channel MOSFET
- Maximum Drain-Source Voltage (Vds): 30V
- Continuous Drain Current (Id): 40A
- Gate Threshold Voltage (Vgs): 1V to 2.5V
- On-Resistance (Rds(on)): 10 mΩ at Vgs = 10V
- Power Dissipation: 2W
- Package Type: SO-8
Applications
The AOZ1267QI-01 is suitable for a wide range of applications, including but not limited to:
- Power management systems
- DC-DC converters
- Load switching applications
- Battery management systems
- Motor control circuits
This power MOSFET is particularly effective in applications requiring efficient power handling and fast switching capabilities, providing designers with a reliable solution for their electronic projects. With its low on-resistance, the AOZ1267QI-01 minimizes power loss and enhances the overall efficiency of the circuit, making it an ideal choice for high-performance designs.