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BSS131 N-channel MOSFET Transistor

The BSS131 is a high-performance N-channel MOSFET transistor designed for low-voltage applications, ideal for switching and amplification in various electronic circuits.

BSS131 三极管/MOSFET
BSS131 三极管/MOSFET

Overview

Overview

The BSS131 is an N-channel MOSFET transistor that excels in low-voltage applications, providing efficient switching and amplification capabilities. With a maximum drain-source voltage of 60V and a continuous drain current rating of 200mA, this power MOSFET is well-suited for a variety of electronic circuit designs. Its low on-resistance ensures minimal power loss, making it an excellent choice for battery-operated devices and efficiency-critical applications.

Key Specifications

  • Type: N-channel MOSFET
  • Maximum Drain-Source Voltage (V_DS): 60V
  • Continuous Drain Current (I_D): 200mA
  • Gate Threshold Voltage (V_GS(th)): 0.8V to 2.0V
  • On-Resistance (R_DS(on)): 0.5 Ohm (typical at V_GS = 10V)
  • Package Type: SOT-23
  • Operating Temperature Range: -55°C to +150°C

Applications

The BSS131 is widely used in various applications, including but not limited to, switching power supplies, motor control circuits, and portable electronic devices. Its compact SOT-23 package makes it ideal for space-constrained designs, while its robust specifications allow for reliable performance in demanding environments. Engineers and designers can leverage the BSS131 in applications requiring efficient power management, such as LED drivers, audio amplifiers, and signal switching. This functionality makes it a versatile component in both hobbyist projects and professional circuit designs.

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